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this is information on a product in full production. september 2013 docid15573 rev 4 1/16 STL90N3LLH6 n-channel 30 v, 0.0038 typ., 24 a stripfet? vi deepgate? power mosfet in powerflat? 5x6 package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses ? very low switching gate charge applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. 1 2 3 4 powerflat?5x6 am15540v2 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max. i d STL90N3LLH6 30 v 0.0045 24 a (1) 1. the value is rated according r thj-pcb table 1. device summary order code marking packages packaging STL90N3LLH6 90n3llh6 powerflat? 5x6 tape and reel www.st.com
contents STL90N3LLH6 2/16 docid15573 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 docid15573 rev 4 3/16 STL90N3LLH6 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c drain current (continuous) at t c = 25 c 90 a i d (1) drain current (continuous) at t c = 70 c 67.5 a i d (1) drain current (continuous) at t c = 100 c 56.2 a i d (2) 2. the value is rated according to r thj-pcb drain current (continuous) at t pcb = 25 c 24 a i d (2) drain current (continuous) at t pcb = 70 c 18 a i d (2) drain current (continuous) at t pcb =100 c 15 a i dm (2) (3) drain current (pulsed) 96 a i dm (1) (3) 3. pulse width limited by safe operating area drain current (pulsed) 360 a p tot (1) total dissipation at t c = 25 c 60 w p tot (2) total dissipation at t pcb = 25 c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case (drain, steady state) 2.08 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-ambient 31.3 c/w table 4. avalanche characteristics symbol parameter value unit e as single pulse avalanche energy (starting t j = 25 c, i d = 12 a; l= 1.25mh) 90 mj electrical characteristics STL90N3LLH6 4/16 docid15573 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v, 1 a v ds = 30 v t c = 125 c 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.7 2.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 12 a 0.0038 0.0045 v gs = 4.5 v, i d = 12 a 0.0057 0.0073 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f=1 mhz, v gs =0 1350 1690 2030 pf c oss output capacitance 230 290 350 pf c rss reverse transfer capacitance 140 176 210 pf q g total gate charge v dd =15 v, i d = 24 a v gs =4.5 v (see figure 14) 17 nc q gs gate-source charge 8 nc q gd gate-drain charge 6 nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain 1.25 1.7 2 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15 v, i d = 12 a, r g =4.7 , v gs =10 v (see figure 13) -9.5-ns t r rise time - 30 - ns t d(off) turn-off delay time - 37 - ns t f fall time - 12 - ns docid15573 rev 4 5/16 STL90N3LLH6 electrical characteristics 16 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 24 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 96 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 24 a, v gs =0 - 1.1 v t rr reverse recovery time i sd = 12 a, di/dt = 100 a/s, v dd =25 v -24 ns q rr reverse recovery charge - 16.8 nc i rrm reverse recovery current - 1.4 a electrical characteristics STL90N3LLH6 6/16 docid15573 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance , ' 9 ' 6 9 $ 2 s h u d w l r q l q w k l v d u h d l v / l p l w h g e \ p d [ 5 ' 6 r q p v p v v 7 m ? & 7 f ? & 6 l q j o h s x o v h $ 0 y , ' 9 ' 6 9 $ 9 9 9 9 * 6 9 9 $ 0 y , ' 9 * 6 9 $ 9 ' 6 9 $ 0 y % 9 ' 6 6 7 - ? & |